Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

Air-stable bottom-gate, top-contact n-channel organic transistors based on a naphthalene diimide exhibiting electron mobilities up to 0.8 cm2/Vs at low voltages were fabricated. Transistors with channel lengths of 1 μm show a transconductance of 60 mS/m, but are significantly limited by the contact...

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Bibliographic Details
Published in:Applied physics letters 2013-06, Vol.102 (23)
Main Authors: Rödel, R., Letzkus, F., Zaki, T., Burghartz, J. N., Kraft, U., Zschieschang, U., Kern, K., Klauk, H.
Format: Article
Language:English
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Summary:Air-stable bottom-gate, top-contact n-channel organic transistors based on a naphthalene diimide exhibiting electron mobilities up to 0.8 cm2/Vs at low voltages were fabricated. Transistors with channel lengths of 1 μm show a transconductance of 60 mS/m, but are significantly limited by the contact resistance. Transmission line measurements in combination with contact resistance models were applied to investigate this influence. Both contact resistance and contact resistivity are proportional to the inverse gate overdrive voltage. Organic complementary ring oscillators were fabricated on a flexible plastic substrate showing record signal delays down to 17 μs at a supply voltage of 2.6 V.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4811127