Nanoclusters of MoO3−x embedded in an Al2O3 matrix engineered for customizable mesoscale resistivity and high dielectric strength

We have synthesized a material consisting of conducting metal oxide (MoO3−x) nanoclusters embedded in a high-dielectric-strength insulator (Al2O3) matrix. The resistivity of this material can be customized by varying the concentration of the MoO3−x nanoclusters. The Al2O3 protects the MoO3−x from st...

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Published in:Applied physics letters 2013-06, Vol.102 (25)
Main Authors: Tong, William M., Brodie, Alan D., Mane, Anil U., Sun, Fuge, Kidwingira, Françoise, McCord, Mark A., Bevis, Christopher F., Elam, Jeffrey W.
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cited_by cdi_FETCH-LOGICAL-c159t-50509f28eb02a16a06221132c9f09a77b2ec70a68e61876528498ff24cf0d7bb3
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container_issue 25
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container_title Applied physics letters
container_volume 102
creator Tong, William M.
Brodie, Alan D.
Mane, Anil U.
Sun, Fuge
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McCord, Mark A.
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Elam, Jeffrey W.
description We have synthesized a material consisting of conducting metal oxide (MoO3−x) nanoclusters embedded in a high-dielectric-strength insulator (Al2O3) matrix. The resistivity of this material can be customized by varying the concentration of the MoO3−x nanoclusters. The Al2O3 protects the MoO3−x from stoichiometry change, thus conserving the number of carriers and maintaining a high dielectric strength. This composite material is grown by atomic layer deposition, a thin film deposition technique suitable for coating 3D structures. We applied these atomic layer deposition composite films to our 3D electron-optical micro electrical mechanical systems devices and greatly improved their performance.
doi_str_mv 10.1063/1.4811480
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title Nanoclusters of MoO3−x embedded in an Al2O3 matrix engineered for customizable mesoscale resistivity and high dielectric strength
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