282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to lo...

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Bibliographic Details
Published in:Applied physics letters 2013-06, Vol.102 (24)
Main Authors: Dong, Peng, Yan, Jianchang, Wang, Junxi, Zhang, Yun, Geng, Chong, Wei, Tongbo, Cong, Peipei, Zhang, Yiyun, Zeng, Jianping, Tian, Yingdong, Sun, Lili, Yan, Qingfeng, Li, Jinmin, Fan, Shunfei, Qin, Zhixin
Format: Article
Language:English
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Summary:We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4812237