282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to lo...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2013-06, Vol.102 (24)
Main Authors: Dong, Peng, Yan, Jianchang, Wang, Junxi, Zhang, Yun, Geng, Chong, Wei, Tongbo, Cong, Peipei, Zhang, Yiyun, Zeng, Jianping, Tian, Yingdong, Sun, Lili, Yan, Qingfeng, Li, Jinmin, Fan, Shunfei, Qin, Zhixin
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c229t-2af5ca9d434a4f0e4956038bee99d8d94b210d5345256684e543d1d79ca27d413
cites cdi_FETCH-LOGICAL-c229t-2af5ca9d434a4f0e4956038bee99d8d94b210d5345256684e543d1d79ca27d413
container_end_page
container_issue 24
container_start_page
container_title Applied physics letters
container_volume 102
creator Dong, Peng
Yan, Jianchang
Wang, Junxi
Zhang, Yun
Geng, Chong
Wei, Tongbo
Cong, Peipei
Zhang, Yiyun
Zeng, Jianping
Tian, Yingdong
Sun, Lili
Yan, Qingfeng
Li, Jinmin
Fan, Shunfei
Qin, Zhixin
description We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.
doi_str_mv 10.1063/1.4812237
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4812237</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_4812237</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-2af5ca9d434a4f0e4956038bee99d8d94b210d5345256684e543d1d79ca27d413</originalsourceid><addsrcrecordid>eNotkL1OwzAYRS0EEqUw8AZeGQz-TeKxqqAgVbDAHDnxl9YosS3bLerbE0Snq6ure4aD0D2jj4xW4ok9yoZxLuoLtGC0rolgrLlEC0qpIJVW7Brd5Pw9V8WFWKATbzjxE16NG_NOOpPBYgsQ8WEsyRxdGKHg0e32hcDkSnF-h60LFjL-cWWP3RRTOM6nCGkIaTK-Bxw89sYHEk0pkPy8ZhPj3iXA-dDlGVwg36KrwYwZ7s65RF8vz5_rV7L92LytV1vSc64L4WZQvdFWCmnkQEFqVVHRdABa28Zq2XFGrRJScVVVjQQlhWW21r3htZVMLNHDP7dPIecEQxuTm0w6tYy2f85a1p6diV_4PV_K</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP - American Institute of Physics</source><creator>Dong, Peng ; Yan, Jianchang ; Wang, Junxi ; Zhang, Yun ; Geng, Chong ; Wei, Tongbo ; Cong, Peipei ; Zhang, Yiyun ; Zeng, Jianping ; Tian, Yingdong ; Sun, Lili ; Yan, Qingfeng ; Li, Jinmin ; Fan, Shunfei ; Qin, Zhixin</creator><creatorcontrib>Dong, Peng ; Yan, Jianchang ; Wang, Junxi ; Zhang, Yun ; Geng, Chong ; Wei, Tongbo ; Cong, Peipei ; Zhang, Yiyun ; Zeng, Jianping ; Tian, Yingdong ; Sun, Lili ; Yan, Qingfeng ; Li, Jinmin ; Fan, Shunfei ; Qin, Zhixin</creatorcontrib><description>We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4812237</identifier><language>eng</language><ispartof>Applied physics letters, 2013-06, Vol.102 (24)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-2af5ca9d434a4f0e4956038bee99d8d94b210d5345256684e543d1d79ca27d413</citedby><cites>FETCH-LOGICAL-c229t-2af5ca9d434a4f0e4956038bee99d8d94b210d5345256684e543d1d79ca27d413</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Dong, Peng</creatorcontrib><creatorcontrib>Yan, Jianchang</creatorcontrib><creatorcontrib>Wang, Junxi</creatorcontrib><creatorcontrib>Zhang, Yun</creatorcontrib><creatorcontrib>Geng, Chong</creatorcontrib><creatorcontrib>Wei, Tongbo</creatorcontrib><creatorcontrib>Cong, Peipei</creatorcontrib><creatorcontrib>Zhang, Yiyun</creatorcontrib><creatorcontrib>Zeng, Jianping</creatorcontrib><creatorcontrib>Tian, Yingdong</creatorcontrib><creatorcontrib>Sun, Lili</creatorcontrib><creatorcontrib>Yan, Qingfeng</creatorcontrib><creatorcontrib>Li, Jinmin</creatorcontrib><creatorcontrib>Fan, Shunfei</creatorcontrib><creatorcontrib>Qin, Zhixin</creatorcontrib><title>282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates</title><title>Applied physics letters</title><description>We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotkL1OwzAYRS0EEqUw8AZeGQz-TeKxqqAgVbDAHDnxl9YosS3bLerbE0Snq6ure4aD0D2jj4xW4ok9yoZxLuoLtGC0rolgrLlEC0qpIJVW7Brd5Pw9V8WFWKATbzjxE16NG_NOOpPBYgsQ8WEsyRxdGKHg0e32hcDkSnF-h60LFjL-cWWP3RRTOM6nCGkIaTK-Bxw89sYHEk0pkPy8ZhPj3iXA-dDlGVwg36KrwYwZ7s65RF8vz5_rV7L92LytV1vSc64L4WZQvdFWCmnkQEFqVVHRdABa28Zq2XFGrRJScVVVjQQlhWW21r3htZVMLNHDP7dPIecEQxuTm0w6tYy2f85a1p6diV_4PV_K</recordid><startdate>20130617</startdate><enddate>20130617</enddate><creator>Dong, Peng</creator><creator>Yan, Jianchang</creator><creator>Wang, Junxi</creator><creator>Zhang, Yun</creator><creator>Geng, Chong</creator><creator>Wei, Tongbo</creator><creator>Cong, Peipei</creator><creator>Zhang, Yiyun</creator><creator>Zeng, Jianping</creator><creator>Tian, Yingdong</creator><creator>Sun, Lili</creator><creator>Yan, Qingfeng</creator><creator>Li, Jinmin</creator><creator>Fan, Shunfei</creator><creator>Qin, Zhixin</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130617</creationdate><title>282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates</title><author>Dong, Peng ; Yan, Jianchang ; Wang, Junxi ; Zhang, Yun ; Geng, Chong ; Wei, Tongbo ; Cong, Peipei ; Zhang, Yiyun ; Zeng, Jianping ; Tian, Yingdong ; Sun, Lili ; Yan, Qingfeng ; Li, Jinmin ; Fan, Shunfei ; Qin, Zhixin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-2af5ca9d434a4f0e4956038bee99d8d94b210d5345256684e543d1d79ca27d413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dong, Peng</creatorcontrib><creatorcontrib>Yan, Jianchang</creatorcontrib><creatorcontrib>Wang, Junxi</creatorcontrib><creatorcontrib>Zhang, Yun</creatorcontrib><creatorcontrib>Geng, Chong</creatorcontrib><creatorcontrib>Wei, Tongbo</creatorcontrib><creatorcontrib>Cong, Peipei</creatorcontrib><creatorcontrib>Zhang, Yiyun</creatorcontrib><creatorcontrib>Zeng, Jianping</creatorcontrib><creatorcontrib>Tian, Yingdong</creatorcontrib><creatorcontrib>Sun, Lili</creatorcontrib><creatorcontrib>Yan, Qingfeng</creatorcontrib><creatorcontrib>Li, Jinmin</creatorcontrib><creatorcontrib>Fan, Shunfei</creatorcontrib><creatorcontrib>Qin, Zhixin</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dong, Peng</au><au>Yan, Jianchang</au><au>Wang, Junxi</au><au>Zhang, Yun</au><au>Geng, Chong</au><au>Wei, Tongbo</au><au>Cong, Peipei</au><au>Zhang, Yiyun</au><au>Zeng, Jianping</au><au>Tian, Yingdong</au><au>Sun, Lili</au><au>Yan, Qingfeng</au><au>Li, Jinmin</au><au>Fan, Shunfei</au><au>Qin, Zhixin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates</atitle><jtitle>Applied physics letters</jtitle><date>2013-06-17</date><risdate>2013</risdate><volume>102</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.</abstract><doi>10.1063/1.4812237</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2013-06, Vol.102 (24)
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_4812237
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP - American Institute of Physics
title 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T10%3A17%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=282-nm%20AlGaN-based%20deep%20ultraviolet%20light-emitting%20diodes%20with%20improved%20performance%20on%20nano-patterned%20sapphire%20substrates&rft.jtitle=Applied%20physics%20letters&rft.au=Dong,%20Peng&rft.date=2013-06-17&rft.volume=102&rft.issue=24&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4812237&rft_dat=%3Ccrossref%3E10_1063_1_4812237%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c229t-2af5ca9d434a4f0e4956038bee99d8d94b210d5345256684e543d1d79ca27d413%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true