Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment

• Published in: Applied physics letters 2013-06, Vol.102 (25)
• Main Authors: Li, H., Cui, Y. X., Wu, K. Y., Tseng, W. K., Cheng, H. H., Chen, H.
• Format: Article
• Language: English
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4812490

We report the effects of thermal annealing on the characteristics of GeSn epilayers grown on Ge-buffered Si wafers with a high Sn content near a threshold value that affords a direct bandgap. On annealing at temperatures below 400 °C, the characteristics of the epilayer remain unchanged, compared to those of the as-grown samples. On annealing the samples at a temperature in the range of 440–540 °C, strain relaxation in the epilayer is observed, accompanied by generation of misfit dislocations at the GeSn/Ge interface. A further increase in annealing temperature beyond 580 °C causes not only a relaxation in strain but also a change in the microstructure of the epilayer. In addition, Sn forms clusters and segregates to the surface, resulting in a reduction in the Sn content of the epilayer. The present investigation shows changes in the characteristics of the film under thermal treatment, providing an insight into the physical properties of such devices.