Latch-up based bidirectional npn selector for bipolar resistance-change memory

A vertically integrated latch-up based n-p-n bidirectional diode, which is analogous to an open-base bipolar junction transistor, is demonstrated for bipolar resistance-change memory selector application. A maximum current density of >50 MA/cm2 and a selectivity of >104 are observed at a fast...

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Bibliographic Details
Published in:Applied physics letters 2013-07, Vol.103 (3)
Main Authors: Kim, Sungho, Moon, Dong-Il, Lu, Wei, Hwan Kim, Dae, Myong Kim, Dong, Choi, Yang-Kyu, Choi, Sung-Jin
Format: Article
Language:English
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Summary:A vertically integrated latch-up based n-p-n bidirectional diode, which is analogous to an open-base bipolar junction transistor, is demonstrated for bipolar resistance-change memory selector application. A maximum current density of >50 MA/cm2 and a selectivity of >104 are observed at a fast switching speed of within 10 ns. The high selectivity as a consequence of the sudden latch-up process is feasible owing to the positive-feedback process initiated by impact ionization. The optimization of the turn-on voltage is comprehensively investigated by numerical device simulation, which ensures the promising potential of the latch-up based selector device.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4813832