Effect of thermal annealing on Boron diffusion, micro-structural, electrical and magnetic properties of laser ablated CoFeB thin films

We report on Boron diffusion and subsequent crystallization of Co40Fe40B20 (CoFeB) thin films on SiO2/Si(001) substrate using pulsed laser deposition. Secondary ion mass spectroscopy reveals Boron diffusion at the interface in both amorphous and crystalline phase of CoFeB. High-resolution transmissi...

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Bibliographic Details
Published in:AIP advances 2013-07, Vol.3 (7), p.072129-072129
Main Authors: Swamy, G. Venkat, Pandey, Himanshu, Srivastava, A. K., Dalai, M. K., Maurya, K. K., Rashmi, Rakshit, R. K.
Format: Article
Language:English
Subjects:
Ablation
Annealing
Boron
Crystallization
Diffusion
Nanocrystals
Secondary ion mass spectroscopy
Thin films
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Summary:We report on Boron diffusion and subsequent crystallization of Co40Fe40B20 (CoFeB) thin films on SiO2/Si(001) substrate using pulsed laser deposition. Secondary ion mass spectroscopy reveals Boron diffusion at the interface in both amorphous and crystalline phase of CoFeB. High-resolution transmission electron microscopy reveals a small fraction of nano-crystallites embedded in the amorphous matrix of CoFeB. However, annealing at 400°C results in crystallization of CoFe with bcc structure along (110) orientation. As-deposited films are non-metallic in nature with the coercivity (H c ) of 5Oe while the films annealed at 400°C are metallic with a H c of 135Oe.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4816811