Effect of thermal annealing on Boron diffusion, micro-structural, electrical and magnetic properties of laser ablated CoFeB thin films

We report on Boron diffusion and subsequent crystallization of Co40Fe40B20 (CoFeB) thin films on SiO2/Si(001) substrate using pulsed laser deposition. Secondary ion mass spectroscopy reveals Boron diffusion at the interface in both amorphous and crystalline phase of CoFeB. High-resolution transmissi...

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Published in:AIP advances 2013-07, Vol.3 (7), p.072129-072129
Main Authors: Swamy, G. Venkat, Pandey, Himanshu, Srivastava, A. K., Dalai, M. K., Maurya, K. K., Rashmi, Rakshit, R. K.
Format: Article
Language:English
Subjects:
Ablation
Annealing
Boron
Crystallization
Diffusion
Nanocrystals
Secondary ion mass spectroscopy
Thin films
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cited_by cdi_FETCH-LOGICAL-c433t-20a3a263224806ccf8d4f1f1806a8ba86cc46a13dbdc0a1ca24a96256804a3193
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creator Swamy, G. Venkat
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description We report on Boron diffusion and subsequent crystallization of Co40Fe40B20 (CoFeB) thin films on SiO2/Si(001) substrate using pulsed laser deposition. Secondary ion mass spectroscopy reveals Boron diffusion at the interface in both amorphous and crystalline phase of CoFeB. High-resolution transmission electron microscopy reveals a small fraction of nano-crystallites embedded in the amorphous matrix of CoFeB. However, annealing at 400°C results in crystallization of CoFe with bcc structure along (110) orientation. As-deposited films are non-metallic in nature with the coercivity (H c ) of 5Oe while the films annealed at 400°C are metallic with a H c of 135Oe.
doi_str_mv 10.1063/1.4816811
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subjects Ablation
Annealing
Boron
Crystallization
Diffusion
Nanocrystals
Secondary ion mass spectroscopy
Thin films
title Effect of thermal annealing on Boron diffusion, micro-structural, electrical and magnetic properties of laser ablated CoFeB thin films
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