GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-i-n junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperat...

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Bibliographic Details
Published in:Journal of applied physics 2013-08, Vol.114 (6)
Main Authors: Mohseni, Parsian K., Hyun Kim, Seung, Zhao, Xiang, Balasundaram, Karthik, Dong Kim, Jeong, Pan, Lei, Rogers, John A., Coleman, James J., Li, Xiuling
Format: Article
Language:English
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Summary:We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-i-n junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the etching solution. Control over nanopillar morphologies is demonstrated, simply through modification of the etching conditions. Optical emission enhancement from the MacEtched p-i-n GaAs nanopillar LED is observed, relative to the non-etched planar counterpart, through room-temperature photoluminescence and electroluminescence characterization.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4817424