Resistive switching in rectifying interfaces of metal-semiconductor-metal structures

We study the electrical characteristics of metal-semiconductor-metal HfO2−x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfac...

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Bibliographic Details
Published in:Applied physics letters 2013-08, Vol.103 (7)
Main Authors: Zazpe, R., Stoliar, P., Golmar, F., Llopis, R., Casanova, F., Hueso, L. E.
Format: Article
Language:English
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Summary:We study the electrical characteristics of metal-semiconductor-metal HfO2−x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage hysteresis loop that arises from the non-trivial interplay of the switching interfaces. We propose an experimental method to disentangle the individual characteristics of each interface based on hysteresis switching loops. A mathematical framework based on simple assumptions allows us to rationalize the whole behavior of the device and reproduce the experimental current-voltage curves of devices with different metallic contacts. We show that each interface complementarily switches between a nonlinear metal-semiconductor interface and an ohmic contact.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4818730