Hydrogen-related, deeply bound excitons in Mg-doped GaN films

Luminescence in the near band-edge spectral region of Mg-doped GaN films grown by metalorganic chemical vapor deposition has been studied at liquid-helium temperatures. Radiative transitions at 3.37 and 3.416 eV were observed to evolve in cathodoluminescence spectra during electron-beam irradiation...

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Bibliographic Details
Published in:Applied physics letters 2013-08, Vol.103 (8)
Main Authors: Juday, R., Fischer, A. M., Huang, Y., Huang, J. Y., Kim, H. J., Ryou, J.-H., Dupuis, R. D., Bour, D. P., Ponce, F. A.
Format: Article
Language:English
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Summary:Luminescence in the near band-edge spectral region of Mg-doped GaN films grown by metalorganic chemical vapor deposition has been studied at liquid-helium temperatures. Radiative transitions at 3.37 and 3.416 eV were observed to evolve in cathodoluminescence spectra during electron-beam irradiation at 5 kV. The intensity of the 3.37 eV peak correlates monotonically with the resistivity of the films. By annealing the films in N2 and N2/H2 atmospheres, the 3.37 and 3.416 eV transitions are shown to be related to hydrogen.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4819029