Study on the thermal stability improvement of GeTe by Al doping

Al-doped GeTe is proposed for high-temperature phase-change memories (PCM). The bonding and coordination environment of Al atoms in Al2.7Ge50Te50 is studied by X-ray photoelectron spectroscopy and nuclear magnetic resonance. The large number of bonds provided by Al improves the stability of the amor...

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Bibliographic Details
Published in:Applied physics letters 2013-08, Vol.103 (9)
Main Authors: Ren, Kun, Rao, Feng, Song, Zhitang, Peng, Cheng, Li, Juntao, Wu, Liangcai, Liu, Bo, Feng, Songlin
Format: Article
Language:English
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Summary:Al-doped GeTe is proposed for high-temperature phase-change memories (PCM). The bonding and coordination environment of Al atoms in Al2.7Ge50Te50 is studied by X-ray photoelectron spectroscopy and nuclear magnetic resonance. The large number of bonds provided by Al improves the stability of the amorphous-state (10-yr retention at 177 °C) as well as the uniformity of the material distribution. The low melting temperature (676 °C) and high set-resistance lower power-consumption of the Al2.7Ge50Te50 based cell. The high thermal stability and low power-consumption have made Al2.7Ge50Te50 material a promising candidate for high thermally stable PCM application.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4819839