Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

We report on the identification of a two-electron transition for the shallow donor silicon in homoepitaxial aluminum nitride (AlN). One c-oriented sample was analyzed by low temperature photoluminescence spectroscopy on multiple excitation spots. We find a unique correlation of one single emission b...

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Bibliographic Details
Published in:Applied physics letters 2013-09, Vol.103 (12)
Main Authors: Neuschl, B., Thonke, K., Feneberg, M., Goldhahn, R., Wunderer, T., Yang, Z., Johnson, N. M., Xie, J., Mita, S., Rice, A., Collazo, R., Sitar, Z.
Format: Article
Language:English
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Summary:We report on the identification of a two-electron transition for the shallow donor silicon in homoepitaxial aluminum nitride (AlN). One c-oriented sample was analyzed by low temperature photoluminescence spectroscopy on multiple excitation spots. We find a unique correlation of one single emission band, 76.6 meV below the free excitonic emission, with the luminescence of excitons bound to neutral silicon proving the identity as a two-electron transition. The assignment is confirmed by temperature dependent photoluminescence investigations. We find a donor ionization energy of (63.5 ± 1.5) meV for silicon in AlN.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4821183