High-performance resistive switching characteristics of programmable metallization cell with oxidized Cu-Ti electrodes

Programmable metallization cell (PMC) memory devices with oxidized Cu-Ti alloy films as the bottom electrodes have been shown to exhibit a superior on/off state current ratio (memory window) of as high as 103 and endurance of 3000 cycles as compared to conventional pure copper and unoxidized Cu-Ti a...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2013-09, Vol.103 (14)
Main Authors: Huang, Yu-Chih, Chou, Chia-Hsin, Liao, Chan-Yu, Tsai, Wan-Lin, Cheng, Huang-Chung
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Programmable metallization cell (PMC) memory devices with oxidized Cu-Ti alloy films as the bottom electrodes have been shown to exhibit a superior on/off state current ratio (memory window) of as high as 103 and endurance of 3000 cycles as compared to conventional pure copper and unoxidized Cu-Ti alloy electrodes. It was conjectured that the Cu-Ti alloy electrodes could obtain the appropriate amount of copper atoms to format and rupture the conductive filaments in the resistive switching layer. Furthermore, the oxidized Cu-Ti alloys could control the Cu cations from the Cu and Cu2O to the appropriate amountto achieve the most favorable PMC characteristics.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4823818