Formation of non-substitutional β-Sn defects in Ge1− x Sn x alloys

Although group IV semiconductor alloys are expected to form substitutionally, in Ge1−xSnx this is true only for low concentrations (x 

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2013-11, Vol.114 (19)
Main Authors: Fuhr, J. D., Ventura, C. I., Barrio, R. A.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Although group IV semiconductor alloys are expected to form substitutionally, in Ge1−xSnx this is true only for low concentrations (x 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4829697