Spin transport in benzofurane bithiophene based organic spin valves

In this paper we present spin transport in organic spin-valves using benzofurane bithiophene (BF3) as spacer layer between NiFe and Co ferromagnetic electrodes. The use of an AlO x buffer layer between the top electrode and the organic layer is discussed in terms of improvements of stacking topology...

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Bibliographic Details
Published in:AIP advances 2014-01, Vol.4 (1), p.017117-017117-7
Main Authors: Palosse, Mathieu, Séguy, Isabelle, Bedel-Pereira, Élena, Villeneuve-Faure, Christina, Mallet, Charlotte, Frère, Pierre, Warot-Fonrose, Bénédicte, Biziere, Nicolas, Bobo, Jean-François
Format: Article
Language:English
Subjects:
Buffer layers
Condensed Matter
CONTAMINATION
Current voltage characteristics
ELECTRODES
Ferromagnetism
HYSTERESIS
Intermetallic compounds
Iron compounds
LAYERS
Magnetic properties
MAGNETORESISTANCE
Magnetoresistivity
MATERIALS SCIENCE
Nickel compounds
OXYGEN
Physics
SPIN
Spin valves
Transport properties
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Summary:In this paper we present spin transport in organic spin-valves using benzofurane bithiophene (BF3) as spacer layer between NiFe and Co ferromagnetic electrodes. The use of an AlO x buffer layer between the top electrode and the organic layer is discussed in terms of improvements of stacking topology, electrical transport and oxygen contamination of the BF3 layer. A study of magnetic hysteresis cycles evidences spin-valve behaviour. Transport properties are indicative of unshorted devices with non-linear I-V characteristics. Finally we report a magnetoresistance of 3% at 40 K and 10 mV in a sample with a 50 nm thick spacer layer, using an AlO x buffer layer.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4862675