L g  = 100 nm In 0.7 Ga 0.3 As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

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Bibliographic Details
Published in:Applied physics letters 2014-04, Vol.104 (16), p.163502
Main Authors: Koh, D., Kwon, H. M., Kim, T.-W., Kim, D.-H., Hudnall, Todd W., Bielawski, Christopher W., Maszara, W., Veksler, D., Gilmer, D., Kirsch, P. D., Banerjee, S. K.
Format: Article
Language:English
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.4871504