Probing channel temperature profiles in Al x Ga 1−x N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

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Bibliographic Details
Published in:Applied physics letters 2014-08, Vol.105 (7), p.73504
Main Authors: Kyaw, L. M., Bera, L. K., Liu, Y., Bera, M. K., Singh, S. P., Dolmanan, S. B., Tan, H. R., Bhat, T. N., Chor, E. F., Tripathy, S.
Format: Article
Language:English
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.4893603