InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al 2 O 3 double-layer insulator

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Bibliographic Details
Published in:Applied physics letters 2014-11, Vol.105 (18), p.183504
Main Authors: Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., Kordoš, P.
Format: Article
Language:English
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.4901170