Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO2 barrier layers

This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO2 barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both U...

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Bibliographic Details
Published in:Applied physics letters 2015-05, Vol.106 (21)
Main Authors: Xu, Yingtian, Xu, Li, Dai, Jun, Ma, Yan, Chu, Xianwei, Zhang, Yuantao, Du, Guotong, Zhang, Baolin, Yin, Jingzhi
Format: Article
Language:English
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Summary:This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO2 barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both UV and visible emissions could be detected by electroluminescence (EL) measurement. When bias voltage reached 60 V at room temperature, a UV emission spike occurred at 390 nm originating from the n-ZnO SMW. Compared with the EL spectrum of the n-ZnO SMW/p-Si heterojunction device without the SiO2 barrier layer, we saw improved UV light extraction efficiency from the current-blocking effect of the SiO2 layer. The intense UV emission in the n-ZnO SMW/SiO2/p-Si heterojunction indicated that the SiO2 barrier layer can restrict the movement of electrons as expected and result in effective electron-hole recombination in ZnO SMW.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4921919