Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO2 barrier layers

This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO2 barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both U...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2015-05, Vol.106 (21)
Main Authors: Xu, Yingtian, Xu, Li, Dai, Jun, Ma, Yan, Chu, Xianwei, Zhang, Yuantao, Du, Guotong, Zhang, Baolin, Yin, Jingzhi
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c229t-5397018a3689af91bc5ad6cf9facaa8de31ffd0f68f7bae14186a2e70fdf2d3f3
cites cdi_FETCH-LOGICAL-c229t-5397018a3689af91bc5ad6cf9facaa8de31ffd0f68f7bae14186a2e70fdf2d3f3
container_end_page
container_issue 21
container_start_page
container_title Applied physics letters
container_volume 106
creator Xu, Yingtian
Xu, Li
Dai, Jun
Ma, Yan
Chu, Xianwei
Zhang, Yuantao
Du, Guotong
Zhang, Baolin
Yin, Jingzhi
description This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO2 barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both UV and visible emissions could be detected by electroluminescence (EL) measurement. When bias voltage reached 60 V at room temperature, a UV emission spike occurred at 390 nm originating from the n-ZnO SMW. Compared with the EL spectrum of the n-ZnO SMW/p-Si heterojunction device without the SiO2 barrier layer, we saw improved UV light extraction efficiency from the current-blocking effect of the SiO2 layer. The intense UV emission in the n-ZnO SMW/SiO2/p-Si heterojunction indicated that the SiO2 barrier layer can restrict the movement of electrons as expected and result in effective electron-hole recombination in ZnO SMW.
doi_str_mv 10.1063/1.4921919
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_4921919</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_4921919</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-5397018a3689af91bc5ad6cf9facaa8de31ffd0f68f7bae14186a2e70fdf2d3f3</originalsourceid><addsrcrecordid>eNotkM1OAjEURhujiYgufINuXQz2tsxPl4aomJDMQtm4mVymt3BNmSGdCuHthcjqy9l8OTlCPIKagCrMM0ymVoMFeyVGoMoyMwDVtRgppUxW2Bxuxd0w_Jww18aMBC1DirjnPlDKqNtg15KTgdebJGnLKXG3lo57Ryfchf54Zu4c79n9YpDfXS233Mb-wJHkgdNGfnKt5QpjZIoy4JHicC9uPIaBHi47Fsu316_ZPFvU7x-zl0XWam1TlhtbKqjQFJVFb2HV5uiK1luPLWLlyID3Tvmi8uUKCaZQFaipVN557Yw3Y_H0_3sSGoZIvtlF3mI8NqCac58Gmksf8wfFFVqP</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO2 barrier layers</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>American Institute of Physics(アメリカ物理学協会)</source><creator>Xu, Yingtian ; Xu, Li ; Dai, Jun ; Ma, Yan ; Chu, Xianwei ; Zhang, Yuantao ; Du, Guotong ; Zhang, Baolin ; Yin, Jingzhi</creator><creatorcontrib>Xu, Yingtian ; Xu, Li ; Dai, Jun ; Ma, Yan ; Chu, Xianwei ; Zhang, Yuantao ; Du, Guotong ; Zhang, Baolin ; Yin, Jingzhi</creatorcontrib><description>This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO2 barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both UV and visible emissions could be detected by electroluminescence (EL) measurement. When bias voltage reached 60 V at room temperature, a UV emission spike occurred at 390 nm originating from the n-ZnO SMW. Compared with the EL spectrum of the n-ZnO SMW/p-Si heterojunction device without the SiO2 barrier layer, we saw improved UV light extraction efficiency from the current-blocking effect of the SiO2 layer. The intense UV emission in the n-ZnO SMW/SiO2/p-Si heterojunction indicated that the SiO2 barrier layer can restrict the movement of electrons as expected and result in effective electron-hole recombination in ZnO SMW.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4921919</identifier><language>eng</language><ispartof>Applied physics letters, 2015-05, Vol.106 (21)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-5397018a3689af91bc5ad6cf9facaa8de31ffd0f68f7bae14186a2e70fdf2d3f3</citedby><cites>FETCH-LOGICAL-c229t-5397018a3689af91bc5ad6cf9facaa8de31ffd0f68f7bae14186a2e70fdf2d3f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Xu, Yingtian</creatorcontrib><creatorcontrib>Xu, Li</creatorcontrib><creatorcontrib>Dai, Jun</creatorcontrib><creatorcontrib>Ma, Yan</creatorcontrib><creatorcontrib>Chu, Xianwei</creatorcontrib><creatorcontrib>Zhang, Yuantao</creatorcontrib><creatorcontrib>Du, Guotong</creatorcontrib><creatorcontrib>Zhang, Baolin</creatorcontrib><creatorcontrib>Yin, Jingzhi</creatorcontrib><title>Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO2 barrier layers</title><title>Applied physics letters</title><description>This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO2 barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both UV and visible emissions could be detected by electroluminescence (EL) measurement. When bias voltage reached 60 V at room temperature, a UV emission spike occurred at 390 nm originating from the n-ZnO SMW. Compared with the EL spectrum of the n-ZnO SMW/p-Si heterojunction device without the SiO2 barrier layer, we saw improved UV light extraction efficiency from the current-blocking effect of the SiO2 layer. The intense UV emission in the n-ZnO SMW/SiO2/p-Si heterojunction indicated that the SiO2 barrier layer can restrict the movement of electrons as expected and result in effective electron-hole recombination in ZnO SMW.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotkM1OAjEURhujiYgufINuXQz2tsxPl4aomJDMQtm4mVymt3BNmSGdCuHthcjqy9l8OTlCPIKagCrMM0ymVoMFeyVGoMoyMwDVtRgppUxW2Bxuxd0w_Jww18aMBC1DirjnPlDKqNtg15KTgdebJGnLKXG3lo57Ryfchf54Zu4c79n9YpDfXS233Mb-wJHkgdNGfnKt5QpjZIoy4JHicC9uPIaBHi47Fsu316_ZPFvU7x-zl0XWam1TlhtbKqjQFJVFb2HV5uiK1luPLWLlyID3Tvmi8uUKCaZQFaipVN557Yw3Y_H0_3sSGoZIvtlF3mI8NqCac58Gmksf8wfFFVqP</recordid><startdate>20150525</startdate><enddate>20150525</enddate><creator>Xu, Yingtian</creator><creator>Xu, Li</creator><creator>Dai, Jun</creator><creator>Ma, Yan</creator><creator>Chu, Xianwei</creator><creator>Zhang, Yuantao</creator><creator>Du, Guotong</creator><creator>Zhang, Baolin</creator><creator>Yin, Jingzhi</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20150525</creationdate><title>Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO2 barrier layers</title><author>Xu, Yingtian ; Xu, Li ; Dai, Jun ; Ma, Yan ; Chu, Xianwei ; Zhang, Yuantao ; Du, Guotong ; Zhang, Baolin ; Yin, Jingzhi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-5397018a3689af91bc5ad6cf9facaa8de31ffd0f68f7bae14186a2e70fdf2d3f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Yingtian</creatorcontrib><creatorcontrib>Xu, Li</creatorcontrib><creatorcontrib>Dai, Jun</creatorcontrib><creatorcontrib>Ma, Yan</creatorcontrib><creatorcontrib>Chu, Xianwei</creatorcontrib><creatorcontrib>Zhang, Yuantao</creatorcontrib><creatorcontrib>Du, Guotong</creatorcontrib><creatorcontrib>Zhang, Baolin</creatorcontrib><creatorcontrib>Yin, Jingzhi</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xu, Yingtian</au><au>Xu, Li</au><au>Dai, Jun</au><au>Ma, Yan</au><au>Chu, Xianwei</au><au>Zhang, Yuantao</au><au>Du, Guotong</au><au>Zhang, Baolin</au><au>Yin, Jingzhi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO2 barrier layers</atitle><jtitle>Applied physics letters</jtitle><date>2015-05-25</date><risdate>2015</risdate><volume>106</volume><issue>21</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO2 barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both UV and visible emissions could be detected by electroluminescence (EL) measurement. When bias voltage reached 60 V at room temperature, a UV emission spike occurred at 390 nm originating from the n-ZnO SMW. Compared with the EL spectrum of the n-ZnO SMW/p-Si heterojunction device without the SiO2 barrier layer, we saw improved UV light extraction efficiency from the current-blocking effect of the SiO2 layer. The intense UV emission in the n-ZnO SMW/SiO2/p-Si heterojunction indicated that the SiO2 barrier layer can restrict the movement of electrons as expected and result in effective electron-hole recombination in ZnO SMW.</abstract><doi>10.1063/1.4921919</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2015-05, Vol.106 (21)
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_4921919
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics(アメリカ物理学協会)
title Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO2 barrier layers
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T12%3A36%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ultraviolet-enhanced%20light%20emitting%20diode%20employing%20individual%20ZnO%20microwire%20with%20SiO2%20barrier%20layers&rft.jtitle=Applied%20physics%20letters&rft.au=Xu,%20Yingtian&rft.date=2015-05-25&rft.volume=106&rft.issue=21&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4921919&rft_dat=%3Ccrossref%3E10_1063_1_4921919%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c229t-5397018a3689af91bc5ad6cf9facaa8de31ffd0f68f7bae14186a2e70fdf2d3f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true