Large and robust resistive switching in co-sputtered Pt-(NiO-Al2O3)-Pt devices

We have systematically investigated the resistive switching and electroresistance behavior in Pt-[NiO-Al2O3]-Pt (PNAP) capacitor-like structures. The PNAP devices show a large ON-OFF ratio (∼107), which is strongly dependent on the rate of the voltage sweep. Interestingly, the devices exhibit a robu...

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Bibliographic Details
Published in:Journal of applied physics 2016-02, Vol.119 (8)
Main Authors: Rebello, A., Adeyeye, A. O.
Format: Article
Language:English
Subjects:
Aluminum oxide
Applied physics
Cobalt
Current carriers
Electric potential
High resistance
High temperature effects
Nickel oxides
Ohmic dissipation
Percolation
Resistance heating
Switching
Trapped charge
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Summary:We have systematically investigated the resistive switching and electroresistance behavior in Pt-[NiO-Al2O3]-Pt (PNAP) capacitor-like structures. The PNAP devices show a large ON-OFF ratio (∼107), which is strongly dependent on the rate of the voltage sweep. Interestingly, the devices exhibit a robust electroresistance behavior in the high resistance OFF state and show an intriguing change of sign of rectification with increasing end voltage. Our direct measurement of the surface temperature of the sample during resistive switching indicates that RESET process is assisted by Joule heating effects. The results are explained on the basis of plausible interplay between Schottky barrier modification due to the trapped charge carriers at the metal–oxide interface and percolation effects of conducting nanofilaments.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4942667