Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals

The formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals was theoretically investigated. A novel theoretical model based on the so-called quantum well action mechanism was proposed; the model considers several factors, which were overlooked in a previously proposed mode...

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Bibliographic Details
Published in:Journal of applied physics 2016-04, Vol.119 (14)
Main Authors: Taniguchi, Chisato, Ichimura, Aiko, Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Sato, Shinya, Tsuge, Hiroshi, Yano, Takayuki
Format: Article
Language:English
Subjects:
ALUMINIUM
Aluminum
ANNEALING
Applied physics
Basal plane
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
DOPED MATERIALS
HYDROGEN 4
LAYERS
NITROGEN
QUANTUM WELLS
SHRINKAGE
SILICON
SILICON CARBIDES
STACKING FAULTS
TEMPERATURE RANGE 0400-1000 K
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Summary:The formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals was theoretically investigated. A novel theoretical model based on the so-called quantum well action mechanism was proposed; the model considers several factors, which were overlooked in a previously proposed model, and provides a detailed explanation of the annealing-induced formation of double layer Shockley-type stacking faults in heavily nitrogen-doped 4H-SiC crystals. We further revised the model to consider the carrier distribution in the depletion regions adjacent to the stacking fault and successfully explained the shrinkage of stacking faults during annealing at even higher temperatures. The model also succeeded in accounting for the aluminum co-doping effect in heavily nitrogen-doped 4H-SiC crystals, in that the stacking fault formation is suppressed when aluminum acceptors are co-doped in the crystals.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4945773