Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth

This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consum...

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Bibliographic Details
Published in:Journal of applied physics 2016-07, Vol.120 (4)
Main Authors: Englhard, M., Klemp, C., Behringer, M., Rudolph, A., Skibitzki, O., Zaumseil, P., Schroeder, T.
Format: Article
Language:English
Subjects:
Applied physics
ARSENIC
ATOMIC FORCE MICROSCOPY
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CRYSTAL STRUCTURE
CRYSTALS
Epitaxial growth
Epitaxial layers
EPITAXY
Gallium arsenide
GALLIUM ARSENIDES
GRINDING
Investigations
LAYERS
LIGHT EMITTING DIODES
Microscopes
POLISHING
Reclamation
Reuse
Scanning electron microscopy
Scanning transmission electron microscopy
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION
X-RAY DIFFRACTION
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Summary:This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In0.5(Ga0.45Al0.55)0.5P (Q55) layer was investigated by high resolution x-ray diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4955333