Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-dio...

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Bibliographic Details
Published in:Applied physics letters 2016-07, Vol.109 (1)
Main Authors: Fiorenza, Patrick, La Magna, Antonino, Vivona, Marilena, Roccaforte, Fabrizio
Format: Article
Language:English
Subjects:
Applied physics
Field effect transistors
MOSFETs
Semiconductor devices
Silicon dioxide
Temperature dependence
Transistors
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Summary:This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (VG > |20 V|) through the SiO2/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (Ntrap  ∼ 2 × 1011 cm−2).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4955465