Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controllin...

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Bibliographic Details
Published in:Journal of applied physics 2016-07, Vol.120 (3)
Main Authors: Xie, H., Prioli, R., Fischer, A. M., Ponce, F. A., Kawabata, R. M. S., Pinto, L. D., Jakomin, R., Pires, M. P., Souza, P. L.
Format: Article
Language:English
Subjects:
ANNEALING
Applied physics
BALANCES
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
HEIGHT
INDIUM ARSENIDES
INHIBITION
LUMINESCENCE
OPTICAL PROPERTIES
Optoelectronics
Photovoltaic cells
PLASTICITY
QUANTUM DOTS
RELAXATION
SOLAR CELLS
Strain relaxation
STRAINS
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Summary:The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plastically relaxed QDs.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4958871