Fabry-Pérot interference in a triple-gated quantum point contact

We demonstrated that a triple-gated GaAs quantum point contact, which has an additional surface gate between a pair of split gates to strengthen the lateral confinement, produces the well-defined quantized conductance and Fabry-Pérot-type (FP-type) oscillations on it even using a relatively low mobi...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2016-10, Vol.109 (14)
Main Authors: Maeda, S., Miyamoto, S., Fauzi, M. H., Nagase, K., Sato, K., Hirayama, Y.
Format: Article
Language:English
Subjects:
Applied physics
Oscillations
Point contact
Resistance
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We demonstrated that a triple-gated GaAs quantum point contact, which has an additional surface gate between a pair of split gates to strengthen the lateral confinement, produces the well-defined quantized conductance and Fabry-Pérot-type (FP-type) oscillations on it even using a relatively low mobility wafer. A one-dimensional phenomenological model potential was developed to explain the oscillatory behavior. By combining the model calculations and dc bias spectroscopy, we obtained a detailed information about the energy scales of the oscillatory structures. The relationships between the FP-type oscillations and the anomaly below the first plateau will be addressed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4964404