Combined electrical transport and capacitance spectroscopy of a MoS2-LiNbO3 field effect transistor

We have measured both the current-voltage ( I SD - V GS ) and capacitance-voltage (C- V GS ) characteristics of a MoS2-LiNbO3 field effect transistor. From the measured capacitance, we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction...

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Bibliographic Details
Published in:Applied physics letters 2017-01, Vol.110 (2)
Main Authors: Michailow, Wladislaw, Schülein, Florian J. R., Möller, Benjamin, Preciado, Edwin, Nguyen, Ariana E., von Son, Gretel, Mann, John, Hörner, Andreas L., Wixforth, Achim, Bartels, Ludwig, Krenner, Hubert J.
Format: Article
Language:English
Subjects:
Applied physics
Capacitance
Current voltage characteristics
Dependence
Electron mobility
Electrons
Field effect transistors
Lithium niobates
Molybdenum disulfide
Semiconductor devices
Transistors
Two dimensional models
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Summary:We have measured both the current-voltage ( I SD - V GS ) and capacitance-voltage (C- V GS ) characteristics of a MoS2-LiNbO3 field effect transistor. From the measured capacitance, we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured I SD - V GS characteristics over the entire range of V GS . Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device, this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4973862