Boron doped GaN and InN: Potential candidates for spintronics

The full potential linearized augmented plane wave method together with the Tran-Blaha modified Becke-Johnson potential is utilized to investigate the electronic structures and magnetism for boron doped GaN and InN. Calculations show the boron substituting nitrogen (BN defects) could induce the GaN...

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Bibliographic Details
Published in:Journal of applied physics 2017-02, Vol.121 (7)
Main Authors: Fan, S. W., Huang, X. N., Yao, K. L.
Format: Article
Language:English
Subjects:
Applied physics
Boron
Defects
Ferromagnetism
Free energy
Heat of formation
Magnetic moments
Magnetism
Organic chemistry
Plane waves
Spintronics
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Summary:The full potential linearized augmented plane wave method together with the Tran-Blaha modified Becke-Johnson potential is utilized to investigate the electronic structures and magnetism for boron doped GaN and InN. Calculations show the boron substituting nitrogen (BN defects) could induce the GaN and InN to be half-metallic ferromagnets. The magnetic moments mainly come from the BN defects, and each BN defect would produce the 2.00 μB total magnetic moment. The electronic structures indicate the carriers-mediated double exchange interaction plays a crucial role in forming the ferromagnetism. Positive chemical pair interactions imply the BN defects would form the homogeneous distribution in GaN and InN matrix. Moderate formation energies suggest that GaN and InN with BN defects could be fabricated experimentally.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4976815