Enhanced transport properties in InAlGaN/AlN/GaN heterostructures on Si (111) substrates: The role of interface quality

We have investigated the structural and transport properties of InAlGaN/AlN/GaN heterostructures grown on Si substrates. By depositing the AlN spacer layer at a low temperature after the growth interruption, the surface morphology and interface quality have been significantly improved. Electron mobi...

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Bibliographic Details
Published in:Applied physics letters 2017-04, Vol.110 (17)
Main Authors: Zhang, Jie, Yang, Xuelin, Cheng, Jianpeng, Feng, Yuxia, Ji, Panfeng, Hu, Anqi, Xu, Fujun, Tang, Ning, Wang, Xinqiang, Shen, Bo
Format: Article
Language:English
Subjects:
Aluminum nitride
Applied physics
Electron transport
Extreme values
Gallium nitrides
Heterostructures
Morphology
Silicon substrates
Transport properties
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Summary:We have investigated the structural and transport properties of InAlGaN/AlN/GaN heterostructures grown on Si substrates. By depositing the AlN spacer layer at a low temperature after the growth interruption, the surface morphology and interface quality have been significantly improved. Electron mobilities of 1620 cm2/Vs at room temperature and 8260 cm2/Vs at 77 K are achieved while delivering a high electron sheet density of about 2.0 × 1013 cm−2, resulting in an extremely low sheet resistance of 186 Ω/□ at room temperature and 37 Ω/□ at 77 K. The experimental results evidence that it is the high interface quality that contributes to the improvement of electron transport properties. Our results provide an effective approach to obtain high quality InAlGaN/GaN heterostructures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4982597