Surface diffusion measurements of In on InGaAs enabled by droplet epitaxy

Surface diffusion is a critical parameter for non-equilibrium growth techniques such as molecular beam epitaxy. However, very little is known about diffusion rates of individual cations in a mixed cation material. Using droplet epitaxy as the growth technique, we isolate the diffusivity prefactor (D...

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Bibliographic Details
Published in:Journal of applied physics 2017-05, Vol.121 (19)
Main Authors: Stevens, Margaret A., Tomasulo, Stephanie, Maximenko, Sergey, Vandervelde, Thomas E., Yakes, Michael K.
Format: Article
Language:English
Subjects:
Applied physics
Cations
Crystal growth
Diffusion rate
Diffusivity
Droplets
Epitaxial growth
Indium
Indium gallium arsenides
Molecular beam epitaxy
Nucleation
Parameters
Surface diffusion
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Summary:Surface diffusion is a critical parameter for non-equilibrium growth techniques such as molecular beam epitaxy. However, very little is known about diffusion rates of individual cations in a mixed cation material. Using droplet epitaxy as the growth technique, we isolate the diffusivity prefactor (D0) and activation energy (E A ) of indium on the surface of In0.53Ga0.47As/InP(100). We report two regimes of indium diffusivity under As2-rich conditions: above and below the droplet deposition temperature of 300 °C, corresponding to a change in surface reconstruction. We also discuss methods of extracting the indium diffusion parameters on metal-rich surfaces using droplet epitaxy and nucleation theory. The obtained diffusion parameters are compared to previous work in the literature and could be employed to optimize growth conditions for non-equilibrium crystal growth.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4983257