Epitaxial growth of Y3Fe5O12 thin films with perpendicular magnetic anisotropy

Here, we report the realization of epitaxial Y3Fe5O12 (YIG) thin films with perpendicular magnetic anisotropy (PMA). The films are grown on the substituted gadolinium gallium garnet substrate (SGGG) by pulsed laser deposition. It was found that a thin buffer layer of Sm3Ga5O12 (SmGG) grown on top of...

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Bibliographic Details
Published in:Applied physics letters 2017-05, Vol.110 (20)
Main Authors: Fu, Jianbo, Hua, Muxin, Wen, Xin, Xue, Mingzhu, Ding, Shilei, Wang, Meng, Yu, Pu, Liu, Shunquan, Han, Jingzhi, Wang, Changsheng, Du, Honglin, Yang, Yingchang, Yang, Jinbo
Format: Article
Language:English
Subjects:
Anisotropy
Applied physics
Bilayers
Buffer layers
Dependence
Epitaxial growth
Film thickness
Gadolinium
Gadolinium-gallium garnet
Magnetic anisotropy
Plane strain
Pulsed laser deposition
Pulsed lasers
Strain relaxation
Substrates
Thin films
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Summary:Here, we report the realization of epitaxial Y3Fe5O12 (YIG) thin films with perpendicular magnetic anisotropy (PMA). The films are grown on the substituted gadolinium gallium garnet substrate (SGGG) by pulsed laser deposition. It was found that a thin buffer layer of Sm3Ga5O12 (SmGG) grown on top of SGGG can suppress the strain relaxation, which helps induce a large enough PMA to overcome the shape anisotropy in YIG thin films. The reciprocal space mappings analysis reveals that the in-plane strain relaxation is suppressed, while the out-of-plane strain relaxation exhibits a strong dependence on the film thickness. We found that the PMA can be achieved for both bilayer (YIG/SmGG) and tri-layer (SmGG/YIG/SmGG) structural films with YIG layer thicknesses up to 20 nm and 40 nm, respectively.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4983783