Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy

N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with a high on currents ∼10 kA/cm2, low off currents 109, and in...

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Bibliographic Details
Published in:Applied physics letters 2017-06, Vol.110 (25)
Main Authors: Cho, YongJin, Hu, Zongyang, Nomoto, Kazuki, Xing, Huili Grace, Jena, Debdeep
Format: Article
Language:English
Subjects:
Applied physics
Current voltage characteristics
Diodes
Dislocation density
Electroluminescence
Electronic devices
Epitaxial growth
Gallium nitrides
Leakage current
Molecular beam epitaxy
Photon emission
Photonics
Plates (structural members)
Single crystals
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Summary:N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with a high on currents ∼10 kA/cm2, low off currents 109, and interband photon emission. The measured electroluminescence spectrum is dominated by a strong near-band edge emission, while deep level luminescence is greatly suppressed. A very low dislocation density leads to a high reverse breakdown electric field of ∼2.2 MV/cm without fields plates—the highest reported for N-polar epitaxial structures. The low leakage current N-polar diodes open up several potential applications in polarization-engineered photonic and electronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4989581