Spin Hall magnetoresistance in an antiferromagnetic magnetoelectric Cr2O3/heavy-metal W heterostructure

The spin Hall magnetoresistance (SMR) effect is studied in a magnetoelectric Cr2O3/heavy-metal W heterostructure. The Cr2O3 film is confirmed as the α-phase, and its Néel temperature is determined. A clear SMR behavior is observed at the interface of Cr2O3/W. A nearly 0.1% SMR ratio is achieved unde...

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Bibliographic Details
Published in:Applied physics letters 2017-06, Vol.110 (26)
Main Authors: Ji, Y., Miao, J., Meng, K. K., Ren, Z. Y., Dong, B. W., Xu, X. G., Wu, Y., Jiang, Y.
Format: Article
Language:English
Subjects:
Antiferromagnetism
Applied physics
Chromium oxides
Electrons
Heterostructures
Magnetic fields
Magnetoresistance
Magnetoresistivity
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Summary:The spin Hall magnetoresistance (SMR) effect is studied in a magnetoelectric Cr2O3/heavy-metal W heterostructure. The Cr2O3 film is confirmed as the α-phase, and its Néel temperature is determined. A clear SMR behavior is observed at the interface of Cr2O3/W. A nearly 0.1% SMR ratio is achieved under a magnetic field of 9 T, which is larger than the reported value in the SrMnO3/Pt structure. A systematic study on the variations of SMR as functions of the magnetic field and its angle is performed. Our results indicate that the antiferromagnetic magnetoelectric Cr2O3/W structure has a promising prospect application in future spintronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4989680