Operando hard X-ray photoelectron spectroscopy study of the Pt/Ru/PbZr0.52Ti0.48O3 interface

We have used hard X-ray photoelectron spectroscopy to probe the Pt/Ru/PbZr0.52Ti0.48O3 (PZT) interface in a Pt/Ru/PZT(220 nm)/Pt/TiO2/SiO2/Si stack. A customized sample-holder allows in-situ photoemission analysis while applying bias to the capacitor. Hard X-rays probe the buried interface between t...

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Bibliographic Details
Published in:Applied physics letters 2017-07, Vol.111 (3)
Main Authors: Gueye, Ibrahima, Le Rhun, Gwenael, Renault, Olivier, Cooper, David, Ceolin, Denis, Rueff, Jean-Pascal, Barrett, Nicholas
Format: Article
Language:English
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Summary:We have used hard X-ray photoelectron spectroscopy to probe the Pt/Ru/PbZr0.52Ti0.48O3 (PZT) interface in a Pt/Ru/PZT(220 nm)/Pt/TiO2/SiO2/Si stack. A customized sample-holder allows in-situ photoemission analysis while applying bias to the capacitor. Hard X-rays probe the buried interface between the top electrode and the ferroelectric PZT. The use of operando conditions reveals a polarization-dependent electronic response, most probably due to imperfect screening of the depolarizing field. There is evidence for an additional core level component related to the electrode-PZT interface. Zr oxide nanostructures at the surface of the sol-gel layer may form a ferroelectric dead layer at the interface, affecting device performance.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4993909