Conduction mechanism change with transport oxide layer thickness in oxide hetero-interface diode

An effective and facile strategy is proposed to demonstrate an engineered oxide hetero-interface of a thin film diode with a high current density and low operating voltage. The electrical characteristics of an oxide hetero-interface thin film diode are governed by two theoretical models: the space c...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2017-07, Vol.111 (5)
Main Authors: Nam, Bu-il, Park, Jong Seo, Lim, Keon-Hee, Ahn, Yong-keon, Lee, Jinwon, Park, Jun-woo, Cho, Nam-Kwang, Lee, Donggun, Lee, Han-Bo-Ram, Kim, Youn Sang
Format: Article
Language:English
Subjects:
Applied physics
Current density
Diodes
Quantum tunnelling
Space charge
Thickness
Thin films
Transport
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An effective and facile strategy is proposed to demonstrate an engineered oxide hetero-interface of a thin film diode with a high current density and low operating voltage. The electrical characteristics of an oxide hetero-interface thin film diode are governed by two theoretical models: the space charge-limited current model and the Fowler-Nordheim (F-N) tunneling model. Interestingly, the dominant mechanism strongly depends on the insulator thickness, and the mechanism change occurs at a critical thickness. This paper shows that conduction mechanisms of oxide hetero-interface thin film diodes depend on thicknesses of transport oxide layers and that current densities of these can be exponentially increased through quantum tunneling in the diodes with the thicknesses less than 10 nm. These oxide hetero-interface diodes have great potential for low-powered transparent nanoscale applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4996862