Electrical transport and optical band gap of NiFe2Ox thin films

We fabricated NiFe2Ox thin films on MgAl2O4(001) by reactive dc magnetron co-sputtering varying the oxygen partial pressure. The fabrication of a material with a variable oxygen deficiency leads to controllable electrical and optical properties which are beneficial for the investigations of the tran...

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Bibliographic Details
Published in:Journal of applied physics 2017-12, Vol.122 (22)
Main Authors: Bougiatioti, Panagiota, Manos, Orestis, Klewe, Christoph, Meier, Daniel, Teichert, Niclas, Schmalhorst, Jan-Michael, Kuschel, Timo, Reiss, Günter
Format: Article
Language:English
Subjects:
Activation energy
Applied physics
Band gap
Electrical resistivity
Electron states
Hall effect
Magnetic properties
Optical properties
Partial pressure
Thin films
Transport phenomena
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Summary:We fabricated NiFe2Ox thin films on MgAl2O4(001) by reactive dc magnetron co-sputtering varying the oxygen partial pressure. The fabrication of a material with a variable oxygen deficiency leads to controllable electrical and optical properties which are beneficial for the investigations of the transport phenomena and could, therefore, promote the use of such materials in spintronic and spin caloritronic applications. We used several characterization techniques to investigate the film properties, focusing on their structural, magnetic, electrical, and optical properties. From the electrical resistivity, we obtained the conduction mechanisms that govern the systems in the high and low temperature regimes. We further extracted low thermal activation energies which unveil extrinsic transport mechanisms. The thermal activation energy decreases in the less oxidized samples revealing the pronounced contribution of a large amount of electronic states localized in the band gap to the electrical conductivity. The Hall coefficient is negative and decreases with increasing conductivity as expected for n-type conduction, while the Hall- and the drift mobilities show a large difference. The optical band gaps were determined via ultraviolet-visible spectroscopy. They follow a similar trend as the thermal activation energies, with lower band gap values in the less oxidized samples.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4999428