Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm−3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served a...

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Bibliographic Details
Published in:Journal of applied physics 2018-01, Vol.123 (3)
Main Authors: Zube, Christian, Malindretos, Joerg, Watschke, Lars, Zamani, Reza R., Disterheft, David, Ulbrich, Rainer G., Rizzi, Angela, Iza, Michael, Keller, Stacia, DenBaars, Steven P.
Format: Article
Language:English
Subjects:
Applied physics
Circular polarization
Electroluminescence
Electron spin
Electrons
Epitaxial growth
Ferromagnetism
Gallium nitrides
Heterostructures
Indium gallium nitrides
Molecular beam epitaxy
Polarization (spin alignment)
Quantum wells
Schottky diodes
Semiconductor junctions
Transport
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Summary:Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm−3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector (“spin-LED”). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5000348