Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

A heavily Ga-doped Ge0.95Sn0.05 layer was grown on the Ge (100) substrate by molecular beam epitaxy (MBE), achieving an active doping concentration of 1.6 × 1020 cm−3 without the use of ion implantation and high temperature annealing that could cause Sn precipitation or surface segregation. An advan...

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Bibliographic Details
Published in:Journal of applied physics 2017-12, Vol.122 (22)
Main Authors: Wu, Ying, Luo, Sheng, Wang, Wei, Masudy-Panah, Saeid, Lei, Dian, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-Chia
Format: Article
Language:English
Subjects:
Applied physics
Doping
Electrical resistivity
Epitaxial growth
Gallium
Germanium
Ion implantation
Molecular beam epitaxy
P-type semiconductors
Substrates
Tin
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Summary:A heavily Ga-doped Ge0.95Sn0.05 layer was grown on the Ge (100) substrate by molecular beam epitaxy (MBE), achieving an active doping concentration of 1.6 × 1020 cm−3 without the use of ion implantation and high temperature annealing that could cause Sn precipitation or surface segregation. An advanced nano-scale transfer length method was used to extract the specific contact resistivity ρc between the metal and the heavily doped p-Ge0.95Sn0.05 layer. By incorporating Sn into Ge and in-situ Ga doping during the MBE growth, an ultra-low ρc of 1.4 × 10−9 Ω·cm2 was achieved, which is 50% lower than the ρc of p+-Ge control and is also the lowest value obtained for metal/p-type semiconductor contacts.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5003272