High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures

The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 °C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm...

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Bibliographic Details
Published in:AIP advances 2018-01, Vol.8 (1), p.015117-015117-8
Main Authors: Gupta, Bipin Kumar, Kedawat, Garima, Gangwar, Amit Kumar, Nagpal, Kanika, Kashyap, Pradeep Kumar, Srivastava, Shubhda, Singh, Satbir, Kumar, Pawan, Suryawanshi, Sachin R., Seo, Deok Min, Tripathi, Prashant, More, Mahendra A., Srivastava, O. N., Hahm, Myung Gwan, Late, Dattatray J.
Format: Article
Language:English
Subjects:
Alignment
Aluminum
Barrier layers
Carbon nanotubes
Chemical vapor deposition
Electron sources
Emission analysis
Emitters
Emitters (electron)
Field emission
Graphitization
Iron
Low pressure
Morphology
Nanotubes
Organic chemistry
Silicon dioxide
Silicon oxides
Silicon substrates
Spectrum analysis
Thickness
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Summary:The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 °C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2–30 walls with an inner diameter of 3–8 nm. Raman spectrum analysis shows G-band at 1580 cm−1 and D-band at 1340 cm−1. The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm2 at 1.2V/μm), low turn-on field (0.6 V/μm) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5004769