Auger losses in dilute InAsBi

Density functional theory is used to determine the electronic band structure and eigenstates of dilute InAsBi bulk materials. The results serve as input for fully microscopic many-body models calculating the composition and carrier density dependent losses due to Auger recombination. At low to inter...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2018-05, Vol.112 (19)
Main Authors: Hader, J., Badescu, S. C., Bannow, L. C., Moloney, J. V., Johnson, S. R., Koch, S. W.
Format: Article
Language:English
Subjects:
Applied physics
Augers
Carrier density
Composition
Density functional theory
Dilution
Energy gap
Splitting
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Density functional theory is used to determine the electronic band structure and eigenstates of dilute InAsBi bulk materials. The results serve as input for fully microscopic many-body models calculating the composition and carrier density dependent losses due to Auger recombination. At low to intermediate carrier concentrations, the Auger loss coefficients are found to be in the range of 10−27cm6/s for a low Bi content and around 10−25cm6/s for compositions suitable for long wavelength emission. It is shown that due to the fact that in InAsBi, the spin-orbit splitting is larger than the bandgap for all Bi contents, the Bi-dependent increase in the spin-orbit splitting does not lead to a significant suppression of the losses. Instead, unlike in GaAsBi, a mostly exponential increase in the losses with the decreasing bandgap is found for all compositions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5022775