Magnetic memory with a switchable reference layer

Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is a memory which has bit cells made of magnetic tunnel junctions (MTJs), which comprise a storage switchable magnetic layer (“free layer”) and, typically, one thin insulating barrier and one stable magnetic layer providing reference spin...

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Bibliographic Details
Published in:Journal of applied physics 2018-10, Vol.124 (13)
Main Authors: Khvalkovskiy, A. V., Mikhailov, A. P., Leshchiner, D. R., Apalkov, D.
Format: Article
Language:English
Subjects:
Applied physics
Barriers
Computer memory
Polarization (spin alignment)
Random access memory
Tunnel junctions
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Summary:Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is a memory which has bit cells made of magnetic tunnel junctions (MTJs), which comprise a storage switchable magnetic layer (“free layer”) and, typically, one thin insulating barrier and one stable magnetic layer providing reference spin polarization for read and write operations (“reference layer”). STT-MRAM may compete with conventional dynamic and static RAM on technological nodes below 22 nm, if its switching current is reduced. This goal may be achieved for MTJ, which has two insulating barriers and reference layers. Building such a double-barrier MTJ, however, faces tremendous material challenges. In this work, a new double-barrier MTJ design with a switchable reference layer is introduced. We show that its efficiency is similar to its counterpart with stable reference layers, but it is much easier to be built.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5045554