Energy condition of isothermal magnetoelectric switching of perpendicular exchange bias in Pt/Co/Au/Cr2O3/Pt stacked film

Energy condition for isothermal reversible magnetoelectric switching of exchange bias was investigated using Pt/Co/Au/Cr2O3/Pt stacked films with different thicknesses of the antiferromagnetic layer (tAFM). We discussed the effective magnetic anisotropy energy of the antiferromagnetic layer ( K AFM...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2018-12, Vol.124 (23)
Main Authors: Nguyen, Thi Van Anh, Shiratsuchi, Yu, Yonemura, Shogo, Shibata, Tatsuo, Nakatani, Ryoichi
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Energy condition for isothermal reversible magnetoelectric switching of exchange bias was investigated using Pt/Co/Au/Cr2O3/Pt stacked films with different thicknesses of the antiferromagnetic layer (tAFM). We discussed the effective magnetic anisotropy energy of the antiferromagnetic layer ( K AFM eff ), the interface exchange coupling energy (JINT), and the offset electric field (E0). The dependence of K AFM eff on tAFM suggested that the magnetic domain wall motion significantly influenced the switching of the electric-field-induced magnetization similar to an ordinal ferromagnet. Below 0.025 mJ/m2, JINT was equal to the exchange anisotropy energy (JK), and above 0.025 mJ/m2, JINT exceeded JK, suggesting that JK is restricted by the magnetic domain wall energy. The dependence of E0 on tAFM revealed that E0 mainly arose from the interfacial uncompensated antiferromagnetic moment. The obtained results suggest that the energetic interpretation of static switching of electric-field-induced magnetization in Cr2O3 was similar to that of the ordinary ferromagnetic materials.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5047563