Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study

Atom probe tomography and secondary ion mass spectrometry were used to investigate the effects of carbon (C) co-implantation and subsequent annealing at 600 to 1200 °C on the behavior of implanted boron (B) atoms in silicon. When B alone was implanted, annealing at 600 to 800 °C caused it to form cl...

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Bibliographic Details
Published in:Journal of applied physics 2018-10, Vol.124 (15)
Main Authors: Tu, Y., Shimizu, Y., Kunimune, Y., Shimada, Y., Katayama, T., Ide, T., Inoue, M., Yano, F., Inoue, K., Nagai, Y.
Format: Article
Language:English
Subjects:
Annealing
Applied physics
Boron
Carbon
Clustering
Diffusion
Enhanced diffusion
Interstitials
Ion implantation
Secondary ion mass spectrometry
Silicon
Temperature dependence
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Summary:Atom probe tomography and secondary ion mass spectrometry were used to investigate the effects of carbon (C) co-implantation and subsequent annealing at 600 to 1200 °C on the behavior of implanted boron (B) atoms in silicon. When B alone was implanted, annealing at 600 to 800 °C caused it to form clusters in the peak region (1020 cm−3) of the concentration profile, and diffusion only occurred in the low-concentration tail region (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5048313