NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node

Because of aggressive downscaling of the dimensions of future semiconductor devices, they will suffer from increased line resistivity and resistance-capacitance delay. In this work, NiAl thin films are investigated as a potential liner- and barrier-free interconnect material. The results show that N...

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Bibliographic Details
Published in:Applied physics letters 2018-10, Vol.113 (18)
Main Authors: Chen, Linghan, Ando, Daisuke, Sutou, Yuji, Gall, Daniel, Koike, Junichi
Format: Article
Language:English
Subjects:
Adhesive strength
Applied physics
Barriers
Electrical resistivity
Interdiffusion
Intermetallic compounds
Nickel aluminides
Nickel base alloys
Nickel compounds
Semiconductor devices
Silicon dioxide
Size effects
Thin films
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Summary:Because of aggressive downscaling of the dimensions of future semiconductor devices, they will suffer from increased line resistivity and resistance-capacitance delay. In this work, NiAl thin films are investigated as a potential liner- and barrier-free interconnect material. The results show that NiAl has strong adhesion, does not undergo interdiffusion with SiO2, and has a favorable resistivity size effect. These features suggest that NiAl is a good candidate for replacing Cu as a liner- and barrier-free interconnect for linewidths below 7 nm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5049620