Acceptor doping of β-Ga2O3 by Mg and N ion implantations

Deep acceptor doping of β-Ga2O3 with Mg and N was demonstrated by implantation of the impurity ions into n-type bulk substrates. Systematic physical and electrical characterizations were performed to demonstrate recovery of the implantation-damaged crystals and electrical activation of the dopant at...

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Bibliographic Details
Published in:Applied physics letters 2018-09, Vol.113 (10)
Main Authors: Wong, Man Hoi, Lin, Chia-Hung, Kuramata, Akito, Yamakoshi, Shigenobu, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, Masataka
Format: Article
Language:English
Subjects:
Activation
Annealing
Applied physics
Doping
Electric potential
Gallium oxides
High voltages
Impurities
Ion implantation
Magnesium
Substrates
Thermal diffusivity
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Summary:Deep acceptor doping of β-Ga2O3 with Mg and N was demonstrated by implantation of the impurity ions into n-type bulk substrates. Systematic physical and electrical characterizations were performed to demonstrate recovery of the implantation-damaged crystals and electrical activation of the dopant atoms by thermal annealing at 1000–1200 °C in an N2 atmosphere. N was found to exhibit much lower thermal diffusivity than Mg, thus enabling the use of higher annealing temperatures to maximize N activation efficiency without significantly altering the impurity profile. Consequently, an n-Ga2O3/Ga2O3:N/n-Ga2O3 structure was capable of sustaining a much larger voltage across its end terminals than its Mg-doped counterpart. The development of an ion implantation technology for acceptor doping of β-Ga2O3 creates unique opportunities for designing and engineering a variety of high-voltage β-Ga2O3 devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5050040