Electrical and optical properties of scandium nitride nanolayers on MgO (100) substrate

Scandium nitride (ScN) is a rocksalt-structure semiconductor that has attracted attention for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices. ScN nanolayers of 30 nm thickness were deposited on MgO...

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Bibliographic Details
Published in:AIP advances 2019-01, Vol.9 (1), p.015317-015317-7
Main Authors: More-Chevalier, Joris, Cichoň, Stanislav, Bulíř, Jiří, Poupon, Morgane, Hubík, Pavel, Fekete, Ladislav, Lančok, Ján
Format: Article
Language:English
Subjects:
Carrier density
Energy conversion
Energy gap
Epitaxial growth
Magnesium oxide
Nitrides
Optical properties
Resistance
Scandium
Substrates
Superlattices
Valence band
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Summary:Scandium nitride (ScN) is a rocksalt-structure semiconductor that has attracted attention for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices. ScN nanolayers of 30 nm thickness were deposited on MgO (001) substrate by reactive sputtering. Epitaxial growth of ScN(002) was observed with a mosaicity between grains around the {002} growth axis. Both direct band gaps theoretically predicted were measured at 2.59 eV and 4.25 eV for the energy gaps between the valence band and the conductance band at the X point and the Γ point respectively. Electrical and optical properties were observed to be strongly influenced by the crystalline order and the carrier concentration.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5056245