Effect of gap width on electron transport through quantum point contact in hBN/graphene/hBN in the quantum Hall regime

This study investigates quantized electron transport in high-mobility quantum point contact (QPC) devices in hBN/graphene/hBN in the quantum Hall regime. This study primarily focuses on the effect of the gap width of split gates on edge-channel manipulations, which defines the QPC structure and its...

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Bibliographic Details
Published in:Applied physics letters 2019-01, Vol.114 (2)
Main Authors: Ahmad, Nurul Fariha, Iwasaki, Takuya, Komatsu, Katsuyoshi, Watanabe, Kenji, Taniguchi, Takashi, Mizuta, Hiroshi, Wakayama, Yutaka, Hashim, Abdul Manaf, Morita, Yoshifumi, Moriyama, Satoshi, Nakaharai, Shu
Format: Article
Language:English
Subjects:
Applied physics
Backscattering
Channels
Electron transport
Graphene
Point contact
Resistance
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Summary:This study investigates quantized electron transport in high-mobility quantum point contact (QPC) devices in hBN/graphene/hBN in the quantum Hall regime. This study primarily focuses on the effect of the gap width of split gates on edge-channel manipulations, which defines the QPC structure and its electrostatic potential distribution. The quantized conductance is governed by the dynamics of edge channels passing through or backscattered at the QPC, which is controlled by both the top-gate and back-gate biases. The effects of the split-gate gap width and the filling in the QPC on the edge-channel manipulations are experimentally verified. The experimental results are consistent with the theoretical predictions of open/closed configurations of the edge channels around QPC with different gate gap widths.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5067296