Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN

Halide perovskites hold exceptional promise as cheap, low temperature solution-processed optoelectronic materials. Yet they are hindered by poor structural and chemical stability, rapidly degrading when exposed to moisture or air. We demonstrate a solution-phase method for infiltrating methylammoniu...

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Bibliographic Details
Published in:APL materials 2019-02, Vol.7 (2), p.021107-021107-7
Main Authors: Lim, Kevin T. P., Deakin, Callum, Ding, Boning, Bai, Xinyu, Griffin, Peter, Zhu, Tongtong, Oliver, Rachel A., Credgington, Dan
Format: Article
Language:English
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Summary:Halide perovskites hold exceptional promise as cheap, low temperature solution-processed optoelectronic materials. Yet they are hindered by poor structural and chemical stability, rapidly degrading when exposed to moisture or air. We demonstrate a solution-phase method for infiltrating methylammonium lead bromide perovskite (CH3NH3PbBr3, or MAPbBr3) into nanoporous GaN which preserved the green photoluminescence of the perovskite after up to 1 year of storage under ambient conditions. Besides a protective effect, confinement within the porous GaN matrix also resulted in a blueshift of the perovskite emission with decreasing pore size, suggesting an additional templating effect of the pores on the size of the perovskite crystals within. We anticipate that our method may be generalised to related perovskite materials, offering a route to producing composites of interest for use in optoelectronic devices for various applications.
ISSN:2166-532X
2166-532X
DOI:10.1063/1.5083037