AlN-based hybrid thin films with self-assembled plasmonic Au and Ag nanoinclusions

Aluminum nitride (AlN)-based two-phase nanocomposite thin films with plasmonic Au and Ag nanoinclusions have been demonstrated using a one-step thin film growth method. Such AlN-based nanocomposites, while maintaining their wide bandgap semiconductor behavior, present tunable optical properties such...

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Bibliographic Details
Published in:Applied physics letters 2019-01, Vol.114 (2)
Main Authors: Wang, Xuejing, Nguyen, Trang, Cao, Yang, Jian, Jie, Malis, Oana, Wang, Haiyan
Format: Article
Language:English
Subjects:
Aluminum nitride
Anisotropy
Applied physics
Dielectric properties
Disks
Film growth
Gold
Group III-V semiconductors
Infrared signatures
Integrated circuits
Nanocomposites
Nanoparticles
Optical properties
Self-assembly
Silicon
Silver
Thin films
Wide bandgap semiconductors
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Summary:Aluminum nitride (AlN)-based two-phase nanocomposite thin films with plasmonic Au and Ag nanoinclusions have been demonstrated using a one-step thin film growth method. Such AlN-based nanocomposites, while maintaining their wide bandgap semiconductor behavior, present tunable optical properties such as bandgap, plasmonic resonance, and complex dielectric function. Depending on the growth atmosphere, the metallic nanoinclusions self-organized into different geometries, such as nano-dendrites, nano-disks, and nanoparticles, providing enhanced optical anisotropy in-plane and out-of-plane. The infrared transmission measurements demonstrate the signature peaks of AlN as well as a broad transmission window attributed to the plasmonic nanoinclusions. This unique AlN-metal hybrid thin film platform provides a route to modulate the optical response of wide bandgap III-V nitride semiconductors towards infrared sensing or all optical based integrated circuits.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5083950